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 IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4050
Nicht fur Neuentwicklungen / not for new designs
Vorlaufige Daten / Preliminary Data
Wesentliche Merkmale * Sehr kleines Gehause: (LxBxH) 1.7 mm x 0.8 mm x 0.65 mm * Emissionswellenlange typ. 850 nm * Fur IR Reflow Loten geeignet * Gegurtet lieferbar * Sehr hohe Gesamtleistung Anwendungen * * * * * * Miniaturlichtschranken Industrieelektronik Messen/Steuern/Regeln" Sensorik Alarm- und Sicherungssysteme IR-Freiraumubertragung Features * Very small package: (LxWxH) 1.7 mm x 0.8 mm x 0.65 mm * Peak wavelength typ. 850 nm * Suitable for IR reflow soldering * Available on tape and reel * High optical total power Applications * * * * * * Miniature photointerrupters Industrial electronics For drive and control circuits Sensor technology Alarm and safety equipment IR free air transmission
Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefahrlich fur das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, mussen gema den Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471 behandelt werden. Typ Type SFH 4050
1)
Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471.
Bestellnummer Ordering Code Q65110A2109
Strahlstarkegruppierung1) (IF = 100 mA, tp = 20 ms) Radiant Intensity Grouping1) Ie (mW/sr) 4 (typ. 7)
gemessen bei einem Raumwinkel = 0.01 sr / measured at a solid angle of = 0.01 sr
ATTENTION - Observe Precautions For Handling - Electrostatic Sensitive Device
2007-03-29
1
SFH 4050
Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Vorwartsgleichstrom Forward current Stostrom, tp = 10 s, D = 0 Surge current Verlustleistung Power dissipation Symbol Symbol Wert Value - 40 ... + 100 5 100 1 180 450 Einheit Unit C V mA A mW K/W
Top , Tstg VR IF IFSM Ptot
Warmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgroe je 5 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 5 mm2 each Warmewiderstand Sperrschicht - Lotstelle bei RthJS Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA Abstrahlwinkel Half angle Aktive Chipflache Active chip area Abmessungen der aktiven Chipflache Dimension of the active chip area Symbol Symbol peak
250
K/W
Wert Value 850
Einheit Unit nm
35
nm
80 0.09 0.3 x 0.3
Grad deg. mm2 mm
A LxB LxW
2007-03-29
2
SFH 4050
Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, e from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Kapazitat, Capacitance VR = 0 V, f = 1 MHz Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom Reverse current VR = 5 V Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms Symbol Symbol Wert Value 12 Einheit Unit ns
tr , tf
Co
15
pF
VF VF IR
1.5 (< 1.8) 2.4 (< 3.0)
V V
not designed for A reverse operation 50 mW
e typ
Temperaturkoeffizient von Ie bzw. e, TCI IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA
- 0.5
%/K
TCV TC
- 0.7 + 0.2
mV/K nm/K
2007-03-29
3
SFH 4050
Strahlstarke Ie in Achsrichtung1) gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstarke Radiant intensity IF = 1 A, tp = 100 s
1)
Symbol SFH 4050-P Ie min Ie max Ie typ 4 8 50
Werte Values SFH 4050-Q 6.3 12.5 70
Einheit Unit mW/sr mW/sr mW/sr
Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one group in one packing unit (variation lower 2:1)
Abstrahlcharakteristik Radiation Characteristics Irel = f ()
40 30 20
10
0 1.0
OHF00614
50 0.8 60
0.6
70
0.4
80 90
0.2 0
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
2007-03-29
4
SFH 4050
Relative Spectral Emission Irel = f ()
100 %
OHL01714
Radiant Intensity
Ie = f (IF) Ie 100 mA
OHL01715
Single pulse, tp = 20 s
101
Max. Permissible Forward Current IF = f (TA), RthJA = 450 K/W
120
OHR00883
Ie I e (100 mA)
100 5
F mA
100
I rel 80
80 R thjA = 450 K/W
60
10
40
-1
60
5
40
10
20
-2
5
20
0 700
750
800
850
nm 950
10-3 0 10
0
5 10 1 5 10 2 mA 10 3
0
20
40
60
80
IF
100 C 120 TA
Forward Current IF = f (VF) Single pulse, tp = 20 s
Permissible Pulse Handling Capability IF = f (), TA = 25 C, duty cycle D = parameter
OHL01713
IF
10 A
0
IF
1.2 A 1.0
OHF02506
D = TP
t
tP
IF T
10 -1 5
D=
0.8 0.005 0.01 0.02 0.033 0.05 0.1 0.2 0.5 1
10 -2 5
0.6
10 -3 5
0.4
0.2
10
-4
0
0.5
1
1.5
2
2.5 V 3
VF
0 -5 10 10-4 10-3 10-2 10-1 100 101 s 102
tp
2007-03-29
5
SFH 4050
Mazeichnung Package Outlines
0.8 (0.031) 0.1 (0.004)
(0.002) 0.125 (0.005) +0.05(0.001) -0.03
1.7 (0.067) 0.1 (0.004)
0.3 (0.012)
Package marking
Package marking
(0.001) 0.65 (0.026) +0.02(0.002) -0.05
GPLY6089
Mae in mm (inch) / Dimensions in mm (inch).
Gehause / Package Farbe / Colour Gehausemarkierung/ Package marking
Epoxydharz, diffus / Epoxy, diffuse Farblos / colourless Anode
Empfohlenes Lotpaddesign Recommended Solder Pad Design
Reflow Loten Reflow Soldering
1.45 (0.057)
0.35 (0.014)
0.35 (0.014)
OHPY1301
Mae in mm (inch) / Dimensions in mm (inch).
2007-03-29
6
1.3 (0.051) 0.1 (0.004)
7 max
5
SFH 4050
Lotbedingungen Soldering Conditions Reflow Lotprofil fur bleifreies Loten Reflow Soldering Profile for lead free soldering
300 C 255 C 240 C 217 C 200 30 s max 150 120 s max 100 Ramp Up 3 K/s (max) 25 C 0 0 50 100 150 200 250 s 300 100 s max Ramp Down 6 K/s (max) 10 s min
Vorbehandlung nach JEDEC Level 2 Preconditioning acc. to JEDEC Level 2 (nach J-STD-020C) (acc. to J-STD-020C)
OHLA0687
T 250
Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile
C 260 C +0C -5 245 C 5 C C 235 C +5C -0
50
t
Wellenloten (TTW) TTW Soldering
300 C T 250 235 C ... 260 C 2. Welle 2. wave 200 1. Welle 1. wave 150 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling ca 200 K/s 5 K/s 2 K/s
(nach CECC 00802) (acc. to CECC 00802)
OHLY0598
10 s
Normalkurve standard curve Grenzkurven limit curves
0 0 50 100 150 t 200 s 250
2007-03-29
7
SFH 4050
Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-03-29 8


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